解释为什么EUV在每次反射时会损失光，然后追踪衍射级次：掩模 → 两个面阵列 → 晶圆。使用纸张图示解释等光程、涂层和逆掩模设计。展示4×缩减，NA可达0.993以及模拟的5.4 nm FWHM峰值。澄清50–60%是被接受的……

Prompt

Explain why EUV loses light at each reflection, then trace diffraction orders: mask → two facet arrays → wafer. Use paper diagrams to explain equal optical paths, coatings and inverse mask design. Show 4× reduction, NA up to 0.993 and simulated 5.4 nm FWHM peaks. Clarify 50–60% is accepted order transmission, not scanner efficiency; the 3D design has 2,256 facets. End with periodic pattern limits, alignment, coherence and untested resist printing. Use plain English, define terms and avoid hype.